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Learn about Semiconductors for your Scottish Highers Physics Exam. This Revision Note includes a summary of Semiconductors for easy recall in your Physics exam
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Semiconductor p-n Junction Diode
Introduction
A semiconductor p-n junction diode is a fundamental electronic component used in various applications.
It is created by combining two different types of semiconductors, p-type and n-type, to form a junction.
Formation of p-n Junction Diode
A p-n junction diode is formed during the manufacturing process of semiconductor materials.
One-half of the semiconductor crystal is doped with p-type impurities (e.g., boron), while the other half is doped with n-type impurities (e.g., phosphorus).
This doping process occurs while the crystal grows, creating a boundary or junction between the p-type and n-type regions.
P-Type Semiconductor
In the p-type region, the semiconductor material contains impurity atoms with three outer shell electrons.
These impurity atoms create "holes" or spaces in the valence band, resulting in a positive charge dominance.
N-Type Semiconductor
In the n-type region, the semiconductor material contains impurity atoms with five outer shell electrons.
These impurity atoms introduce extra electrons into the conduction band, leading to a negative charge dominance.
Formation of the Junction
At the junction between the p-type and n-type regions, electrons from the n-type side migrate towards the holes in the p-type side.
This migration of charge carriers creates a region known as the depletion zone or depletion region.
Semiconductor p-n Junction Diode
Depletion Zone
The depletion zone is an area within the junction where there are no mobile charge carriers (no free electrons or holes).
It acts as a barrier to the flow of current in the absence of an external voltage.
Forward Bias and Reverse Bias
When a voltage is applied in the forward bias direction (positive to p-type and negative to n-type), it reduces the barrier, allowing current to flow through the diode.
In reverse bias (negative to p-type and positive to n-type), the barrier is increased, preventing current flow.
Diode Characteristics
A p-n junction diode exhibits nonlinear current-voltage (I-V) characteristics.
The diode conducts in the forward bias, offering minimal resistance to current flow, and blocks current in reverse bias.
Applications
P-n junction diodes are used in various applications, including rectification (converting AC to DC), signal clipping, voltage regulation, and light-emitting diodes (LEDs).
They play a crucial role in electronic circuits and are essential building blocks in modern electronics.
bookmarkSummary
Key Points
A p-n junction diode is created by combining p-type and n-type semiconductor materials during crystal growth.
The junction forms a depletion zone, which acts as a barrier to current flow without an applied voltage.
Diodes conduct in the forward bias and block current in the reverse bias.
They have diverse applications in electronics, from rectification to light emission.
Semiconductor p-n Junction Diode
Summary
A semiconductor p-n junction diode is a fundamental electronic component formed by combining p-type and n-type semiconductor materials. It exhibits unique electrical properties and is widely used in electronics for various purposes, making it an essential component in modern technology.
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