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4.1 Identify the semiconductor device symbols in QUESTIONS 4.1.1 and 4.1.2 below - NSC Electrical Technology Electronics - Question 4 - 2023 - Paper 1

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4.1 Identify the semiconductor device symbols in QUESTIONS 4.1.1 and 4.1.2 below. 4.1.1 4.1.2 4.2 Describe the construction of the MOSFET in FIGURE 4.2 below. FI... show full transcript

Worked Solution & Example Answer:4.1 Identify the semiconductor device symbols in QUESTIONS 4.1.1 and 4.1.2 below - NSC Electrical Technology Electronics - Question 4 - 2023 - Paper 1

Step 1

4.1.1

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The symbol represents an N-channel enhancement MOSFET.

Step 2

4.1.2

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The symbol represents a P-channel depletion MOSFET.

Step 3

4.2

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The construction of a MOSFET typically includes a gate, source, and drain. The regions between the source and drain terminals are heavily doped. The gate terminal is insulated from the channel region, usually by a thin layer of dielectric material. This allows for electrical control of the channel conductivity.

Step 4

4.3.1

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R1 and R2 function as potential dividers to bias the MOSFET and set its operating point.

Step 5

4.3.2

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A MOSFET can be operated as a linear amplifier by selecting appropriate biasing resistors to place it in the active region of the transfer characteristic. This allows for proper amplification of the input signal.

Step 6

4.3.3

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During the first 90° of the input signal, the voltage across the gate-source terminal (Vgs) gradually increases, causing the channel conductance and thus the drain-source current (Ids) to increase. This results in an amplified output signal opposite the input.

Step 7

4.4.1

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The transistor used to produce the characteristic curve in FIGURE 4.4 is an enhancement mode MOSFET.

Step 8

4.4.2

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Point A on the characteristic curve represents the quiescent point, where the MOSFET operates in a steady state without input signal fluctuations.

Step 9

4.5.1

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The switching mode of the UJT is multi-shot, meaning it allows for continuous switching operations.

Step 10

4.5.2

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R3 limits the discharge current of the capacitor through the UJT to a safe level, ensuring that the capacitor discharges fully before the next cycle.

Step 11

4.7.1

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The op-amp circuit in FIGURE 4.7 is a non-inverting amplifier.

Step 12

4.7.2

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Infinite bandwidth means that the operational amplifier can operate without a frequency limitation, providing the same amplification across all frequencies.

Step 13

4.7.3

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The voltage gain, A_v, can be calculated using the formula: Av=1+RfRinA_v = 1 + \frac{R_f}{R_{in}} Substituting values gives: Av=1+47×10310×103=5.7A_v = 1 + \frac{47 \times 10^3}{10 \times 10^3} = 5.7

Step 14

4.7.4

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If a 100 mV signal is applied to the input, the output voltage can be calculated as: Vout=Av×Vin=5.7×100×103=0.57V=570mVV_{out} = A_v \times V_{in} = 5.7 \times 100 \times 10^{-3} = 0.57 V = 570 mV

Step 15

4.8.1

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Pin A is the Control Voltage and Pin B is the Trigger.

Step 16

4.8.2

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The discharge pin (pin 7) provides a discharge path for the timing capacitor during the timing cycle.

Step 17

4.8.3

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Comparator 1 compares the threshold voltage on pin 6 to two-thirds of the capacitor voltage and determines the output state based on this comparison.

Step 18

4.8.4

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Two uses of the 555 IC include: 1) Timer applications for generating delay; 2) Pulse-width modulation for controlling servos or motors.

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